advanced power n-channel enhancement mode electronics corp. power mosfet 100% r g & uis test bv dss 30v simple drive requirement r ds(on) 2.1m fast switching characteristic i d 4 120a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i d @t c =25 a i dm a p d @t c =25 w p d @t a =25 w e as single pulse avalanche energy 3 mj t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.2 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data and specifications subject to change without notice parameter 1 total power dissipation 2.4 storage temperature range operating junction temperature range -55 to 175 thermal data 125 total power dissipation 125 -55 to 175 gate-source voltage + 20 pulsed drain current 1 drain current, v gs @ 10v 4 120 drain current, v gs @ 10v 4 (silicon limited) drain current, v gs @ 10v 4 (silicon limited) parameter rating drain-source voltage 30 AP1A003P halogen-free product 201609201 520 189 133 g d s g d s to-220(p) a p4604 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-220 package is widely preferred for all commercial- industrial through hole applications. the low thermal resistance and low package cost contribute to the worldwide popular package. g d s g d s to-220(p) a p1a003 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-220 package is widely preferred for all commercial- industrial through hole applications. the low thermal resistance and low package cost contribute to the worldwide popular package. .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =40a - - 2.1 m ? v gs =4.5v, i d =30a - - 3 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =5v, i d =40a - 195 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =30a - 83 133 nc q gs gate-source charge v ds =24v - 17 - nc q gd gate-drain ("miller") charge v gs =4.5v - 41 - nc t d(on) turn-on delay time v ds =15v - 14 - ns t r rise time i d =40a - 70 - ns t d(off) turn-off delay time r g =3.3 - 100 - ns t f fall time v gs =10v - 120 - ns c iss input capacitance v gs =0v - 7300 11680 pf c oss output capacitance v ds =15v - 1320 - pf c rss reverse transfer capacitance f=1.0mhz - 675 - pf r g gate resistance f=1.0mhz - 1.5 3 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =40a, v gs =0v - - 1.2 v t rr reverse recovery time i s =40a, v gs =0 v , - 26 - ns q rr reverse recovery charge di/dt=100a/s - 14 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.starting t j =25 o c , v dd =30v , l=0.1mh , r g =25 4.package limitation current is 120a . this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP1A003P .
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 AP1A003P 0 100 200 300 400 500 600 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 40 80 120 160 200 240 01234 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 6.0v 5.0v v g =4.0v t c =175 o c 1.5 1.6 1.7 1.8 1.9 2 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =30a t c =25 o c 0.4 0.8 1.2 1.6 2.0 -100 0 100 200 t j , junction temperature ( o c) normalized r ds(on) i d =40a v g =10v 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =175 o c 0 0.4 0.8 1.2 1.6 2 -100 0 100 200 t j ,junction temperature ( o c) normalized v gs(th) i d =1ma .
ap1a003 p fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. drain current v.s. case fig 12. switching time waveform temperature 4 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 2000 4000 6000 8000 10000 12000 1 5 9 13 17 21 25 29 33 37 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 2 4 6 8 10 0 40 80 120 160 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =30a v ds =24v 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms dc operation in this area limited by r ds(on) 0 40 80 120 160 200 240 25 75 125 175 t c , case temperature ( o c ) i d , drain current (a) limited by package t d(on) t r t d(off) t f v ds v gs 10% 90% .
ap1a003 p fig 13. typ. drain-source on state fig 14. total power dissipation resistance fig 15. transfer characteristics 5 0 2 4 6 8 0 20 40 60 80 100 120 i d , drain current (a) r ds(on) (m ) t j =25 o c 4.5v v gs =10v 0 40 80 120 160 0 50 100 150 200 t c , case temperature( o c) p d , power dissipation(w) 0 40 80 120 160 200 012345 v gs , gate-to-source voltage (v) i d , drain current (a) t j =175 o c t j =25 o c v ds =5v t j = -55 o c .
AP1A003P marking information 6 part numbe r 1a003 ywwsss date code (ywwsss) y last digit of the year ww week sss sequence .
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